0.021A, 600V SMALL-SIGNAL-TRANSISTOR

DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge. FEATURES * RDS(ON)

文件：230.96 Kbytes 頁數(shù)：4 Pages

UTC

友順

0.021A, 600V SMALL-SIGNAL-TRANSISTOR

DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge. FEATURES * RDS(ON)

文件：230.96 Kbytes 頁數(shù)：4 Pages

UTC

友順

Low Input Capacitance

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features ? Low Input Capacitance ? High BVDSS Rating for Power Application ? Low Input/Output Leakage ? To

文件：366.45 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

Low Input Capacitance

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features ? Low Input Capacitance ? High BVDSS Rating for Power Application ? Low Input/Output Leakage ? To

文件：366.45 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

N-Channel Depletion-Mode MOSFET Transistors

[Siliconix] Features ● High Breakdown Voltage: 260 V ● Normally “On” Low rDS Switch: 3.5 Ω ● Low Input and Output Leakage ● Low-Power Drive Requirement ● Low Input Capacitance Benefits ● Full-Voltage Operation ● Low Offset Voltage ● Low Error Voltage ● Easily Driven Without Buffer ● Hi

文件：57.57 Kbytes 頁數(shù)：4 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

絲?。?a target="_blank" title="Marking" href="/b123./marking.html">B123.；Package：SOT-23；N-Channel Enhancement Mode MOSFET

文件：1.07264 Mbytes 頁數(shù)：9 Pages

FUTUREWAFER

絲?。?a target="_blank" title="Marking" href="/c23/marking.html">C23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：367.31 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/c23/marking.html">C23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：128.61 Kbytes 頁數(shù)：3 Pages

DIODES

美臺半導(dǎo)體

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：202.46 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

SIPMOS??Small-Signal-Transistor Feature

文件：3.46577 Mbytes 頁數(shù)：8 Pages

INFINEON

英飛凌