100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ? RDS(ON) , VGS@10V, ID@170mA

文件：320.98 Kbytes 頁(yè)數(shù)：6 Pages

PANJIT

強(qiáng)茂

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS ? Small-Signal Transistor ? N channel ? Enhancement mode ? Logic Level ? VGS(th) = 0.8...2.0V

文件：133.21 Kbytes 頁(yè)數(shù)：8 Pages

SIEMENS

西門子

絲?。?a target="_blank" title="Marking" href="/b123/marking.html">B123；Package：SOT-23；N Channel MOSFET

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：937.51 Kbytes 頁(yè)數(shù)：5 Pages

SY

順燁電子

絲?。?a target="_blank" title="Marking" href="/b123/marking.html">B123；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 100V ● ID 200mA ● RDS(ON)( at VGS=10V)

文件：594.71 Kbytes 頁(yè)數(shù)：6 Pages

YANGJIE

揚(yáng)杰電子

絲印：123；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：1.54835 Mbytes 頁(yè)數(shù)：5 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/sa/marking.html">SA；Package：SOT-23；N-CHANNEL POWER MOSFET

FEATURE ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

文件：671.74 Kbytes 頁(yè)數(shù)：6 Pages

HMSEMI

華之美半導(dǎo)體

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features High density cell design for extremely low RDS(ON). Applications This device is suitable for use as a load switch or in PWM applications.

文件：711.86 Kbytes 頁(yè)數(shù)：6 Pages

FOSHAN

藍(lán)箭電子

N-Channel Enhancement Mode Field Effect Tramsistor

Features ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? High Drain-Source Voltage Rating

文件：699.02 Kbytes 頁(yè)數(shù)：3 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

N-Channel MOSFET

Features ● VDS (V) = 100V ● ID = 0.17 A (VGS = 10V) ● RDS(ON)

文件：501.82 Kbytes 頁(yè)數(shù)：5 Pages

YFWDIODE

佑風(fēng)微

N-CHANNEL ENHANCEMENT MODE MOSFET

Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low curr

文件：351.97 Kbytes 頁(yè)數(shù)：5 Pages

BWTECH