絲印：BSS；Package：SOT-723；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：73.43 Kbytes 頁(yè)數(shù)：5 Pages

A-POWER

富鼎先進(jìn)電子

絲印：SA；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

FEATURE ● Pb-Free Package is available.

文件：450.15 Kbytes 頁(yè)數(shù)：4 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/sa-/marking.html">SA-；Package：SOT-23；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：284.54 Kbytes 頁(yè)數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

絲印：SA-；Package：SOT-23；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：145.18 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/sa-/marking.html">SA-；Package：SOT-23；N-channel enhancement mode vertical D-MOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. The BSS123 is supplied in the SOT23 subminiature surface mounting package. FEATURES ? ’Trench’ technology ? Extremely fast switching ? Logic level compatible ? Subminiatur

文件：56.92 Kbytes 頁(yè)數(shù)：4 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/c23/marking.html">C23；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

文件：67.74 Kbytes 頁(yè)數(shù)：3 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/123/marking.html">123；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：1.54835 Mbytes 頁(yè)數(shù)：5 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/sa/marking.html">SA；Package：SOT-23；N-CHANNEL POWER MOSFET

FEATURE ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

文件：671.74 Kbytes 頁(yè)數(shù)：6 Pages

HMSEMI

華之美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/b123/marking.html">B123；Package：SOT-23；N Channel MOSFET

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：937.51 Kbytes 頁(yè)數(shù)：5 Pages

SY

順燁電子

絲印：B123；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 100V ● ID 200mA ● RDS(ON)( at VGS=10V)

文件：594.71 Kbytes 頁(yè)數(shù)：6 Pages

YANGJIE

揚(yáng)杰電子