P-channel vertical D-MOS intermediate level FET

Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES ? Direct interface to C-MOS, TTL, etc. ? High-speed switching ? No secondary breakdown.

文件：76.49 Kbytes 頁數(shù)：12 Pages

PHI

PHI

P-channel enhancement mode vertical D-MOS transistor

恩XP

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ￠J with no thermal runaway ● eds environmental standards o

文件：67.87 Kbytes 頁數(shù)：2 Pages

PANJIT

強(qiáng)茂

MEDIUM CURRENT PLASTIC RECTIFIER

FEATURES ● High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95°C with no thermal runaway ● Exceeds environmental standards of

文件：128.83 Kbytes 頁數(shù)：2 Pages

TRSYS

Transys Electronics

PLASTIC SILICON RECTIFIERS

FEATURES * Low forward voltage * High current capability * High leakage current * High surge capability * Low cost

文件：99.95 Kbytes 頁數(shù)：2 Pages

SEMTECH

先之科