絲?。?strong>BSP122；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES Vos = 200V = 10A @Vos = 10v. B Roson $1350 @Vos= 10V 507-223 package. |

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TECHPUBLIC

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N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 package and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES ? Direct interface to C-MOS, TTL, etc. ? High-spe

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PHI

PHI

N-Channel 200 V (D-S) MOSFET

FEATURES ? Available in tape and reel ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements

文件：1.03072 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

N-channel enhancement mode vertical D-MOS transistor

FEATURES · Direct interface to C-MOS, TTL, etc. · High-speed switching · No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 package and intended for use as a line current interruptor in telephone sets and for applications in relay, high-

文件：174.83 Kbytes 頁數(shù)：9 Pages

NEXPERIA

安世

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION\nN-channel enhancement mode vertical D-MOS transistor in a SOT223 package and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.FEATURES\n? Direct interface to C-MOS, TTL, etc.\n? High-speed switching\n ? Direct interface to C-MOS, TTL, etc.\n? High-speed switching\n? No secondary breakdown.?;

恩XP

N-channel vertical D-MOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

N-Channel Enhancement Mode Power MOSFET

Techpublic

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