P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES ? Very low RDS(on) ? Direct interface to C-MOS, TTL, etc. ? High-speed switching ? No secondary breakdown

文件：65.25 Kbytes 頁數(shù)：12 Pages

PHI

PHI

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION\nP-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.FEATURES\n? Very low RDS(on)\n? Direct interface to C-MOS, TTL, etc.\n? High-speed switching\n? No secondary breakdown ? Very low RDS(on)\n? Direct interface to C-MOS, TTL, etc.\n? High-speed switching\n? No secondary breakdown;

恩XP

Bipolar Junction Transistor

FEATURES ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast， etc

文件：119.41 Kbytes 頁數(shù)：3 Pages

JINGDAO

晶導

main ratings

Description : FREDFET with fast-recovery reverse diode, N-channel, enhancement mode

文件：172.49 Kbytes 頁數(shù)：6 Pages

SIEMENS

西門子

Easy driver for cost effective application

DESCRIPTION ? High speed switching ? Low RDS(ON) ? Easy driver for cost effective application APPLICATIONS ? Automotive power actuator drivers ? Motor controls ? DC-DC converters

文件：65.64 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電