N-channel enhancement mode TrenchMOS transistor

VDSS = 30 V ID = 6 A RDS(ON) ≤ 100 m? (VGS = 10 V) RDS(ON) ≤ 200 m? (VGS = 4.5 V) GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast s

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PHI

PHI

N-channel enhancement mode TrenchMOS? transistor

FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? High thermal cycling performance ? Low thermal resistance GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- ? Motor and rel

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NEXPERIA

安世

N-channel enhancement mode TrenchMOS? transistor

VDSS = 30 V\nID = 6 A\nRDS(ON) ≤ 100 m? (VGS = 10 V)\nRDS(ON) ≤ 200 m? (VGS = 4.5 V)GENERAL DESCRIPTION\nN-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.FEATURES\n? ’Trench’ technology\n? Low on-state resistance\n? Fast switching\n? High thermal cyc ? ’Trench’ technology\n? Low on-state resistance\n? Fast switching\n? High thermal cycling performance\n? Low thermal resistanceApplications:-\n? Motor and relay drivers\n? d.c. to d.c. converters\n? Logic level translatorThe BSP100 is supplied in the SOT223 surface mounting package.;

恩XP

N-channel TrenchMOS intermediate level FET

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

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安世

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