N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package. FEATURES ? High speed switching ? No secondary breakdown ? Very low on-state resistance. APPLICATIONS ? Motor and actuator drivers ? Power management ? Synchronized rectification.

文件：109.33 Kbytes 頁數(shù)：12 Pages

PHI

PHI

N-Channel 30 V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? AEC-Q101 Qualifiedc ? 100 Rg and UIS Tested

文件：1.01398 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?1 technology. Product availability: BSP030 in SOT223. 2. Features n TrenchMOS? technology n Fast switching n Low on-state resistance n Logic level compatible n Surface mount package. 3

文件：449.05 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

N-channel TrenchMOS intermediate level FET

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世