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          首頁 >BLV33>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BLV33

          VHF linear power transistor

          DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1?16 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud. FEATURES ? Diffused emitter ballasting resistors for an optimum temperature profile ? Gold sandwich metallization ensures exce

          文件:130.07 Kbytes 頁數(shù):20 Pages

          PHI

          PHI

          PHI

          BLV33

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI BLV33 is a Common Emitter Device Designed for Class A Television Applications. FEATURES INCLUDE: ? Gold Metalization ? Emitter Ballasting

          文件:43.19 Kbytes 頁數(shù):3 Pages

          ASI

          BLV33

          VHP linear power transistor

          DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a Vie 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud. FEATURES ? Diffused emitter ballasting resistors for an optimum temperature profile ? Gold sandwich metallization ensures excel

          文件:146.63 Kbytes 頁數(shù):4 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          BLV33

          VHF linear power transistor

          Description: NPN silicon planar epitaxial transistor encapsulated in a 1/16 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud. Primarily intended for use in linear VHF amplifiers for television transmitters and transposers. Features: ? Diffused emitter balla

          文件:48.35 Kbytes 頁數(shù):1 Pages

          ELEFLOW

          BLV33F

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: BLV33F is Designed for Operation in Band II! TV Transposers and Transmitter Amplifiers from 170 to 230MHz. FEATURES: ? Gold Metalization ? Internal Input Matching ? Omnigold? Metalization System

          文件:82.17 Kbytes 頁數(shù):1 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          BLV33F

          VHF linear power transistor

          DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1?2” 6 lead SOT119A capstan package with ceramic cap. All leads are isolated from the flange. FEATURES ? Internally matched input for wideband operation and high power gain ? Diffused emitter ballasting resistors for an

          文件:148.71 Kbytes 頁數(shù):20 Pages

          PHI

          PHI

          PHI

          BLV33F

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI BLV33F is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. FEATURES: ? Gold Metalization ? Internal Input Matching ? Omnigold? Metalization System

          文件:23.68 Kbytes 頁數(shù):1 Pages

          ASI

          BLV33

          Trans GP BJT NPN 33V 12.5A 4-Pin SOT-147

          NJS

          NJS

          BLV33F

          Trans GP BJT NPN 33V 12.5A 6-Pin CDFM

          NJS

          NJS

          晶體管資料

          • 型號(hào):

            BLV33

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            甚高頻 (VHF)_功率放大 (L)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

            65V

          • 最大電流允許值:

            12.5A

          • 最大工作頻率:

            224MHZ

          • 引腳數(shù):

            4

          • 可代換的型號(hào):

          • 最大耗散功率:

            1.9W

          • 放大倍數(shù):

          • 圖片代號(hào):

            G-256

          • vtest:

            65

          • htest:

            224000000

          • atest:

            12.5

          • wtest:

            1.9

          技術(shù)參數(shù)

          • Output Power:

            26.5(Typ)W

          • Number of Elements per Chip:

            1

          • Minimum Operating Temperature:

            -65°C

          • Minimum DC Current Gain:

            100(Max)

          • Maximum Transition Frequency:

            750(Typ)MHz

          • Maximum Operating Temperature:

            200°C

          • Maximum Emitter Base Voltage:

            4V

          • Maximum DC Collector Current:

            12.5A

          • Maximum Collector Emitter Voltage:

            33V

          • Maximum Collector Emitter Saturation Voltage:

            15@3A@25AV

          • Maximum Base Emitter Saturation Voltage:

            0.75(Typ)@0.6A@6AV

          • Material:

            Si

          • Configuration:

            Single Dual Emitter

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          PHI
          05+
          原廠原裝
          54
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          PHI
          24+
          28
          詢價(jià)
          PHI
          23+
          TO-55
          1200
          專營高頻管模塊,全新原裝!
          詢價(jià)
          PH
          25+
          SOT-147
          6500
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價(jià)
          PH
          18+
          TO-57
          85600
          保證進(jìn)口原裝可開17%增值稅發(fā)票
          詢價(jià)
          PHI
          24+
          144
          現(xiàn)貨供應(yīng)
          詢價(jià)
          PHI
          23+
          TO-59
          8510
          原裝正品代理渠道價(jià)格優(yōu)勢(shì)
          詢價(jià)
          PHI
          23+
          SMD
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          PH
          25+
          CAN
          500000
          行業(yè)低價(jià),代理渠道
          詢價(jià)
          PHI
          99+
          SMD
          1
          一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價(jià)
          更多BLV33供應(yīng)商 更新時(shí)間2026-1-18 9:16:00
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