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          首頁 >BLV33F>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BLV33F

          VHF linear power transistor

          DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1?2” 6 lead SOT119A capstan package with ceramic cap. All leads are isolated from the flange. FEATURES ? Internally matched input for wideband operation and high power gain ? Diffused emitter ballasting resistors for an

          文件:148.71 Kbytes 頁數(shù):20 Pages

          PHI

          PHI

          PHI

          BLV33F

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI BLV33F is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. FEATURES: ? Gold Metalization ? Internal Input Matching ? Omnigold? Metalization System

          文件:23.68 Kbytes 頁數(shù):1 Pages

          ASI

          BLV33F

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: BLV33F is Designed for Operation in Band II! TV Transposers and Transmitter Amplifiers from 170 to 230MHz. FEATURES: ? Gold Metalization ? Internal Input Matching ? Omnigold? Metalization System

          文件:82.17 Kbytes 頁數(shù):1 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          BLV33F

          Trans GP BJT NPN 33V 12.5A 6-Pin CDFM

          NJS

          NJS

          晶體管資料

          • 型號:

            BLV33F

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            甚高頻 (VHF)_功率放大 (L)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

            65V

          • 最大電流允許值:

            12.5A

          • 最大工作頻率:

            224MHZ

          • 引腳數(shù):

            6

          • 可代換的型號:

          • 最大耗散功率:

            16W

          • 放大倍數(shù):

          • 圖片代號:

            G-256

          • vtest:

            65

          • htest:

            224000000

          • atest:

            12.5

          • wtest:

            16.0001

          技術(shù)參數(shù)

          • Output Power:

            22(Typ)W

          • Number of Elements per Chip:

            1

          • Minimum Operating Temperature:

            -65°C

          • Minimum DC Current Gain:

            15@3A@25V

          • Maximum Transition Frequency:

            750(Typ)MHz

          • Maximum Operating Temperature:

            200°C

          • Maximum Emitter Base Voltage:

            4V

          • Maximum DC Collector Current:

            12.5A

          • Maximum Collector Emitter Voltage:

            33V

          • Maximum Collector Emitter Saturation Voltage:

            0.75(Typ)@0.6A@6AV

          • Material:

            Si

          • Configuration:

            Single Quad Emitter

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          更多BLV33F供應(yīng)商 更新時間2026-1-19 10:34:00
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