| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
BLV20 | VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8 flange 文件：81.8 Kbytes 頁數(shù)：11 Pages | PHI PHI | PHI | |
BLV20 | NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV20 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: ? Common Emitter ? PG = 12 dB at 8.0 W/175 MHz ? Omnigold? Metalization System 文件：18.86 Kbytes 頁數(shù)：1 Pages | ASI | ASI | |
BLV20 | VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8 flange enve 文件：111.71 Kbytes 頁數(shù)：3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
UHF power transistor DESCRIPTION NPN silicon planar epitaxial power transistor in an 8-lead SOT409A SMD package with ceramic cap. All leads are isolated from the mounting base. FEATURES ? Emitter ballasting resistors for optimum temperature profile ? Gold metallization ensures excellent reliability ? Internal in 文件：109.41 Kbytes 頁數(shù)：16 Pages | PHI PHI | PHI | ||
UHF power transistor DESCRIPTION NPN silicon planar transistor in a 2-lead SOT437A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES ? Emitter ballasting resistors for optimum temperature profile ? Gold metallization ensures excellent reliability ? Internal input and output match 文件：101.36 Kbytes 頁數(shù)：12 Pages | PHI PHI | PHI | ||
UHF power transistor DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES ? Emitter ballasting resistors for optimum temperature profile ? Gold metallization ensures excellent reliability ? Internal input and ou 文件：75.59 Kbytes 頁數(shù)：12 Pages | PHI PHI | PHI | ||
UHF power transistor DESCRIPTION NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES ? Emitter ballasting resistors for optimum temperature profile ? Gold metallization ensures excellent reliability ? Internal input and output match 文件：128.06 Kbytes 頁數(shù)：12 Pages | PHI PHI | PHI | ||
UHF power transistor DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. FEATURES ? Emitter ballasting resistors for optimum temperature profile ? Gold metallization ensures excellent reliability ? Internal input and output m 文件：84.07 Kbytes 頁數(shù)：12 Pages | PHI PHI | PHI | ||
BLV20 | VHF power transistor DESCRIPTION\nN-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions.\nIt has a 3/8\" flange enve | 恩XP | 恩XP | |
BLV20 | NPN SILICON RF POWER TRANSISTOR DESCRIPTION:\nThe ASI BLV20 is Designed for Class C, 28 V High Band Applications up to 175 MHz.FEATURES:\n? Common Emitter\n? PG = 12 dB at 8.0 W/175 MHz\n? Omnigold? Metalization System | ASI Semiconductor | ASI Semiconductor |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
甚高頻 （VHF）_功率放大 （L）
- 封裝形式：
貼片封裝
- 極限工作電壓：
65V
- 最大電流允許值：
0.9A
- 最大工作頻率：
175MHZ
- 引腳數(shù)：
4
- 可代換的型號：
- 最大耗散功率：
8W
- 放大倍數(shù)：
- 圖片代號：
G-266
- vtest：
65
- htest：
175000000
- atest：
0.9
- wtest：
8
詳細(xì)參數(shù)
- 型號：
BLV20
- 功能描述：
射頻雙極電源晶體管 RF Transistor
- RoHS：
否
- 制造商：
M/A-COM Technology Solutions
- 配置：
Single 直流集電極/Base Gain hfe
- Min：
40
- 最大工作頻率：
30 MHz 集電極—發(fā)射極最大電壓
- VCEO：
25 V 發(fā)射極 - 基極電壓
- VEBO：
4 V
- 集電極連續(xù)電流：
20 A
- 功率耗散：
250 W
- 封裝/箱體：
Case 211-11
- 封裝：
Tray
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
PHI |
2019+ |
SMD |
6992 |
原廠渠道 可含稅出貨 |
詢價(jià) | ||
PHI |
23+ |
1688 |
房間現(xiàn)貨庫存:QQ:373621633 |
詢價(jià) | |||
MOT |
24+ |
580 |
詢價(jià) | ||||
PHI |
23+ |
TO-59 |
220 |
專營高頻管模塊,全新原裝! |
詢價(jià) | ||
ASI |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢價(jià) | ||
FREESCALE |
24+ |
TO-59 |
100 |
價(jià)格優(yōu)勢 |
詢價(jià) | ||
MOTOROLA/摩托羅拉 |
25+ |
TO-59r |
1200 |
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢 |
詢價(jià) | ||
MOTOROLA/摩托羅拉 |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價(jià)格優(yōu)勢 |
詢價(jià) | ||
PHI |
22+ |
高頻管 |
350 |
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！ |
詢價(jià) | ||
PHI |
23+ |
高頻管 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |
