It can be used under the -55 ??to 150 ??usage environment

1.It can be used under the -55 ℃ to +150 ℃ usage environment. 2.Meets large current up to 11A max. suitable for power lines. 3.Meets to surface mounting. 4.Good bias current characteristics enables less drop down of impedance under large current. Application General power lines.

文件：374.65 Kbytes 頁數(shù)：3 Pages

MURATA

村田

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a SOT96-1(SO8) package. FEATURES ? High efficiency ? High gain ? Internal pre-matched input ? Low supply voltage. APPLICATIONS ? Hand-held radio equipment in common emitter class-AB operation for 900 MHz communic

文件：55.73 Kbytes 頁數(shù)：8 Pages

PHI

PHI

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223H SMD package. FEATURES ? Very high efficiency ? Low supply voltage. APPLICATIONS ? Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communication band.

文件：73.88 Kbytes 頁數(shù)：11 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 envelope. FEATURES ? Very high efficiency ? Low supply voltage. APPLICATIONS ? Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communications band.

文件：108.89 Kbytes 頁數(shù)：12 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. FEATURES ? SMD encapsulation ? Gold metallization ensures excellent reliability. APPLICATIONS ? Hand-held radio equipment in the 900 MHz communication band.

文件：102.86 Kbytes 頁數(shù)：12 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. FEATURES ? SMD encapsulation ? Gold metallization ensures excellent reliability. APPLICATIONS ? Hand-held radio equipment in the 900 MHz communication band.

文件：102.18 Kbytes 頁數(shù)：12 Pages

PHI

PHI

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. FEATURES ? High efficiency ? High gain ? Internal pre-matched input. APPLICATIONS ? Hand-held radio equipment in common emitter class-AB operation for 900 MHz Time Division Multiple

文件：75.01 Kbytes 頁數(shù)：11 Pages

PHI

PHI