Photoelectric Sensors

BLT 21M-001-P-S4 Basic features Approval/Conformity cULus CE UKCA WEEE Basic standard IEC 60947-5-2 Principle of operation Luminescence sensor Series 21M Style Square Connection can be rotated

文件：111.86 Kbytes 頁數(shù)：3 Pages

BALLUFF

巴魯夫

NPN 2GHz RF POWER TRANSISTOR

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT103 plastic package. FEATURES ? High power gain ? High efficiency ? Small size discrete power amplifier ? 1.9 GHz operating area ? Gold metallization ensures excellent reliability. APPLICATIONS ? C

文件：485.71 Kbytes 頁數(shù)：8 Pages

PHI

PHI

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. FEATURES ? High efficiency ? High gain ? Internal pre-matched input. APPLICATIONS ? Hand-held radio equipment in common emitter class-AB operation for 1.8 GHz Time Division Multiple Acce

文件：54.04 Kbytes 頁數(shù)：8 Pages

PHI

PHI

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band. FEATURES ? SMD encapsulation ? Gold metallization ensures excellent reliability.

文件：70.32 Kbytes 頁數(shù)：10 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A SMD package. FEATURES ? Emitter ballasting resistors for an optimum temperature profile ? Gold metallization ensures excellent reliability. APPLICATIONS ? Common emitter class-B operation in portable

文件：93.65 Kbytes 頁數(shù)：12 Pages

PHI

PHI

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT122D studless envelope with a ceramic cap. It is designed for common emitter, class-B operation in portable radio transmitters in the 470 MHz communications band. All leads are isolated from the mounting flange. FEAT

文件：72.16 Kbytes 頁數(shù)：11 Pages

PHI

PHI

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT122D studless envelope with a ceramic cap. It is designed for common emitter, class-B operation in portable radio transmitters in the 470 MHz communications band. All leads are isolated from the mounting flange. FEAT

文件：123.06 Kbytes 頁數(shù)：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

It can be used under the -55 ??to 150 ??usage environment

1.It can be used under the -55 ℃ to +150 ℃ usage environment. 2.Meets large current up to 11A max. suitable for power lines. 3.Meets to surface mounting. 4.Good bias current characteristics enables less drop down of impedance under large current. Application General power lines.

文件：374.65 Kbytes 頁數(shù)：3 Pages

MURATA

村田

It can be used under the -55 ??to 150 ??usage environment

1.It can be used under the -55 ℃ to +150 ℃ usage environment. 2.Meets large current up to 11A max. suitable for power lines. 3.Meets to surface mounting. 4.Good bias current characteristics enables less drop down of impedance under large current. Application General power lines.

文件：374.65 Kbytes 頁數(shù)：3 Pages

MURATA

村田