Power LDMOS transistor

文件：301.86 Kbytes 頁數(shù)：9 Pages

PHI

PHI

LDMOS S-band radar power transistor

文件：172.49 Kbytes 頁數(shù)：13 Pages

PHI

PHI

LDMOS S-band radar power transistor

文件：334.67 Kbytes 頁數(shù)：15 Pages

PHI

PHI

LDMOS S-band radar power transistor

文件：129.3 Kbytes 頁數(shù)：12 Pages

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PHI

BLS7G3135L-350P_15

文件：188.58 Kbytes 頁數(shù)：13 Pages

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PHI

LDMOS S-band radar power transistor

文件：138.91 Kbytes 頁數(shù)：10 Pages

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PHI

70R420,hv,高壓,sj,超結(jié)

BLS70R420, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. ? Fast Switching\n? 100% avalanche tested\n? Improved dv/dt capability\n? RoHS product;

Belling

上海貝嶺

N-channel Enhanced MOSFETs

BLS70R600, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose appl. ? Fast switching\n? 100% avalanche tested\n? Improved dv/dt capability\n? RoHS product\n? ;

Belling

上海貝嶺

N-channel Enhanced MOSFETs

BLS70R900, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose appl. ? Fast switching\n? 100% avalanche tested\n? Improved dv/dt capability\n? RoHS product\n? ;

Belling

上海貝嶺

Package：SOT-539A；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF FET LDMOS 65V 12DB SOT539A

Ampleon USA Inc.