LDMOS S-band radar power transistor

General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for S-band operation (2.7 GHz to 2.9 GHz) ■ Excellent thermal stability ■ Easy power contr

文件：183.3 Kbytes 頁數(shù)：10 Pages

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RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

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LDMOS S-band radar power transistor

General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Features and benefits ? High efficiency ? Excellent ruggedness ? Designed for S-band operation (2.7 GHz to 2.9 GHz) ? Excellent thermal stability ? Easy power cont

文件：1.00836 Mbytes 頁數(shù)：13 Pages

AMPLEON

安譜隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

LDMOS S-band radar power transistor

General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Features and benefits ? Easy power control ? Integrated ESD protection ? High flexibility with respect to pulse formats ? Excellent ruggedness ? High efficiency ? Excellent th

文件：1.03442 Mbytes 頁數(shù)：13 Pages

AMPLEON

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LDMOS S-band radar power transistor

General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Features and benefits ? High efficiency ? Excellent ruggedness ? Designed for broadband operation ? Excellent thermal stability ? Easy power control ? Integrate

文件：761.6 Kbytes 頁數(shù)：10 Pages

AMPLEON

安譜隆

LDMOS S-band radar power transistor

General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Features and benefits ? Easy power control ? Integrated ESD protection ? High flexibility with respect to pulse formats ? Excellent ruggedness ? High efficiency ? Excellent th

文件：1.03442 Mbytes 頁數(shù)：13 Pages

AMPLEON

安譜隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP