LDMOS S-Band radar power transistor

文件：84.41 Kbytes 頁(yè)數(shù)：12 Pages

恩XP

LDMOS S-Band radar power transistor

文件：84.41 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI

LDMOS S-Band radar power transistor

文件：255.34 Kbytes 頁(yè)數(shù)：13 Pages

PHI

PHI

LDMOS S-Band radar power transistor

文件：84.41 Kbytes 頁(yè)數(shù)：12 Pages

恩XP

60R360,hv,高壓,sj,超結(jié)

BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. ? Fast Switching\n? 100% avalanche tested\n? Improved dv/dt capability\n? RoHS product;

Belling

上海貝嶺

N-channel Enhanced MOSFETs

BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose appl ? Fast Switching\n? 100% avalanche tested\n? Improved dv/dt capability\n? RoHS product\n?;

Belling

上海貝嶺

N-channel Enhanced MOSFETs

BLS60R520, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose appl ? Fast Switching\n? Improved dv/dt capability\n? RoHS product\n;

Belling

上海貝嶺

Package：SOT-975C；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF FET LDMOS 60V 15DB SOT975C

Ampleon USA Inc.

Package：SOM038；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF FET LDMOS 32V SOM038

Ampleon USA Inc.

Package：SOT-502B；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF FET LDMOS 60V 13.5DB SOT502B

Ampleon USA Inc.