LDMOS S-band radar power transistor

General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Features ■ Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 μs with δ of 10 : ? Output power = 120 W

文件：81.61 Kbytes 頁數(shù)：12 Pages

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RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

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LDMOS S-band radar power transistor

General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Features and benefits ? Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 : ? Output pow

文件：880.94 Kbytes 頁數(shù)：12 Pages

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安譜隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

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S-band LDMOS transistor

General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Features and benefits ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Designed for broadband operation (2.7 GHz

文件：1.62538 Mbytes 頁數(shù)：17 Pages

AMPLEON

安譜隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

S-band LDMOS transistor

General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Features and benefits ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Designed for broadband operation (2.7 GHz

文件：1.62538 Mbytes 頁數(shù)：17 Pages

AMPLEON

安譜隆

LDMOS S-band radar power transistor

General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Features and benefits ? Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 : ? Output pow

文件：837.74 Kbytes 頁數(shù)：12 Pages

AMPLEON

安譜隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP