UHF power LDMOS transistor

General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: ◆ Average output power = 35.5 W

文件：51.91 Kbytes 頁數(shù)：9 Pages

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UHF power LDMOS transistor

General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Features ■ Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: ◆ Output power = 29.5 W (AV) ◆ Gain

文件：51.54 Kbytes 頁數(shù)：9 Pages

PHI

PHI

UHF power LDMOS transistor

General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 950 mA: ◆ Output power = 25 W (AV)

文件：52.29 Kbytes 頁數(shù)：9 Pages

PHI

PHI

UHF power LDMOS transistor

General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: ◆ Average output power = 35.5 W

文件：51.91 Kbytes 頁數(shù)：9 Pages

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亞德諾

UHF power LDMOS transistor

General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Features ■ Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: ◆ Output power = 29.5 W (AV) ◆ Gain

文件：51.54 Kbytes 頁數(shù)：9 Pages

PHI

PHI

UHF power LDMOS transistor

General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: ◆ Output power = 25 W (AV)

文件：51.78 Kbytes 頁數(shù)：9 Pages

PHI

PHI

UHF power LDMOS transistor

General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: ◆ Output power = 30 W (AV)

文件：51.78 Kbytes 頁數(shù)：9 Pages

PHI

PHI

UHF power LDMOS transistor

General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: ◆ Output power = 25 W (AV)

文件：51.78 Kbytes 頁數(shù)：9 Pages

PHI

PHI

UHF power LDMOS transistor

General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: ◆ Output power = 30 W (AV)

文件：51.78 Kbytes 頁數(shù)：9 Pages

PHI

PHI

Power LDMOS transistor

General description 160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Features and benefits ? Designed for broadband operation (1805 MHz to 2025 MHz) ? Decoupling leads to enable improved video bandwidth ? Excellent ruggedness ? High efficiency

文件：1.3166 Mbytes 頁數(shù)：14 Pages

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