PCB Mount Power Film Capacitors

文件：246.92 Kbytes 頁數：5 Pages

CDE

Space-saving Two-wire Signal Conditioners B-UNIT

文件：105.48 Kbytes 頁數：2 Pages

MSYSTEM

愛模

絲?。?strong>BLC；Package：TSOT23-8；Single-String, 1.8V Minimum VIN, 36V VOUT Boost LED Driver

DESCRIPTION The MP3363 is a fixed-frequency converter ideal for low-current and high-current boost applications. The low 0.2V feedback voltage (VFB) offers higher efficiency in white LED driver applications. The MP3363 regulates the output voltage (VOUT) up to 36V, with efficiency as high a

文件：1.38999 Mbytes 頁數：16 Pages

MPS

美國芯源

絲?。?a target="_blank" title="Marking" href="/blcda03c-4/marking.html">BLCDA03C-4；Package：SOP-08；Transient Voltage Suppressors for ESD Protection

Feature 507 Watts Peak Pulse Power per Line (tp=8/20μs) Protects Four Bidirectional I/O lines Low Clamping Voltage Working voltage : 3.3V Low leakage current IEC61000-4-2(ESD) ±30kV (air),±30kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 26A (8/20μs) Applications

文件：2.4166 Mbytes 頁數：4 Pages

UNSEMI

優(yōu)恩半導體

絲印：BLCDA03C-4；Package：SOP-08；Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 500 Watts Peak Pulse Power per Line (tp=8/20μs) Protects four bidirectional I/O lines Low clamping voltage Working voltage : 3.3V Low leakage current Applications High-Speed Data Lines Microprocessor Based Equipment Test &

文件：2.25528 Mbytes 頁數：4 Pages

UNSEMI

優(yōu)恩半導體

Power LDMOS transistor

General description 350 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1452 MHz to 1492 MHz. Features and benefits ? Excellent ruggedness ? High efficiency ? Low thermal resistance providing excellent thermal stability ? Lower output c

文件：1.68723 Mbytes 頁數：13 Pages

AMPLEON

安譜隆

Power LDMOS transistor

General description 600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1427 MHz to 1518 MHz. Features and benefits ? Excellent ruggedness ? High efficiency ? Low thermal resistance providing excellent thermal stability ? Lower output c

文件：1.57374 Mbytes 頁數：15 Pages

AMPLEON

安譜隆

Power LDMOS transistor

General description 300 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features and benefits ? Excellent ruggedness ? High efficiency ? Low thermal resistance providing excellent thermal stability ? Lower output c

文件：1.98363 Mbytes 頁數：14 Pages

AMPLEON

安譜隆

Power LDMOS transistor

General description 360 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features and benefits ? Excellent ruggedness ? High efficiency ? Low thermal resistance providing excellent thermal stability ? Lower output c

文件：1.67523 Mbytes 頁數：15 Pages

AMPLEON

安譜隆

Power LDMOS transistor

General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features and benefits ? Excellent ruggedness ? High efficiency ? Low thermal resistance providing excellent thermal stability ? Lower output c

文件：1.7535 Mbytes 頁數：16 Pages

AMPLEON

安譜隆