| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages | 恩XP | 恩XP | ||
NPN 3.5 GHz wideband transistor DESCRIPTION NPN resistance-stabilized transistor in a SOT122E capstan envelope. It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Dueto Its high transition frequency, it has a high power gain, in conjunction with good wideband properties, an 文件:94.2 Kbytes 頁(yè)數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages | 恩XP | 恩XP | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. Features ? High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA ? Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz ? High Powe 文件:171.53 Kbytes 頁(yè)數(shù):5 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. Features · High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA · Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz 文件:120.95 Kbytes 頁(yè)數(shù):5 Pages | ADPOW | ADPOW | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. Features ? High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA ? Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz ? High Powe 文件:81.25 Kbytes 頁(yè)數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. Features · High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA · Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz 文件:120.95 Kbytes 頁(yè)數(shù):5 Pages | ADPOW | ADPOW | ||
Silicon NPN Planar RF Transistor Features ● High power gain ● Low noise figure ● High transition frequency Applications ??? RF amplifier up to GHz range specially for wide band antenna amplifier. 文件:141.13 Kbytes 頁(yè)數(shù):10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Silicon NPN Planar RF Transistor Features ? High power gain ? Low noise figure ? High transition frequency ? Lead (Pb)-free component ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications ??? RF amplifier up to GHz range specially for wide band antenna amplifier. 文件:129.479 Kbytes 頁(yè)數(shù):9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN trnsistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications. 文件:132.37 Kbytes 頁(yè)數(shù):3 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-PNP
- 性質(zhì):
表面帖裝型 (SMD)
- 封裝形式:
貼片封裝
- 極限工作電壓:
30V
- 最大電流允許值:
5A
- 最大工作頻率:
120MHZ
- 引腳數(shù):
3
- 可代換的型號(hào):
2SB1308,
- 最大耗散功率:
0.75W
- 放大倍數(shù):
- 圖片代號(hào):
H-100
- vtest:
30
- htest:
120000000
- atest:
5
- wtest:
0.75
技術(shù)參數(shù)
- 電壓 - 集射極擊穿(最大值):
12V
- 頻率 - 躍遷:
8GHz
- 噪聲系數(shù)(dB,不同 f 時(shí)的典型值):
1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz
- 增益:
19.5dB
- 功率 - 最大值:
175mW
- 不同?Ic,Vce?時(shí)的 DC 電流增益(hFE)(最小值):
50 @ 5mA,8V
- 電流 - 集電極(Ic)(最大值):
20mA
- 工作溫度:
150°C(TJ)
- 安裝類型:
表面貼裝
- 封裝/外殼:
SC-75,SOT-416
- 供應(yīng)商器件封裝:
PG-SC-75
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
LINFINEON |
23+ |
SOT393 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
LINFINEON |
23+ |
SOT393 |
7000 |
詢價(jià) | |||
INFINEON/英飛凌 |
2223+ |
PG-SOD323-2 |
26800 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn) |
詢價(jià) | ||
恩XP |
1725+ |
SOT23 |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
Infineon/英飛凌 |
24+ |
TSLP-3 |
6000 |
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成 |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
TSLP-3 |
12700 |
買原裝認(rèn)準(zhǔn)中賽美 |
詢價(jià) | ||
PHI |
25+ |
SOT23 |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
INFINEON |
25+ |
SOT23 |
30000 |
原廠原裝,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
恩XP |
2021/2022+ |
N/A |
6000 |
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢(shì)終端BOM表可配單提供樣品 |
詢價(jià) |
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