NPN 3.5 GHz wideband transistor

DESCRIPTION NPN resistance-stabilized transistor in a SOT122E capstan envelope. It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Due to its high transition frequency, it has a high power gain, in conjunction with good wideband propertie

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

NPN 3.5 GHz wideband transistor

DESCRIPTION NPN resistance-stabilized transistor in a SOT122E capstan envelope. It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Dueto Its high transition frequency, it has a high power gain, in conjunction with good wideband properties, an

文件：94.2 Kbytes 頁(yè)數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

NPN 5 GHz wideband transistor

文件：339.73 Kbytes 頁(yè)數(shù)：14 Pages

恩XP

NPN 5 GHz寬頻帶晶體管

NPN寬帶晶體管，采用SOT23塑料封裝。PNP補(bǔ)充型號(hào)；BFT92 符合AEC-Q101標(biāo)準(zhǔn)\n高功率增益\n低互調(diào)失真\n低噪聲系數(shù);

恩XP

Trans GP BJT NPN 15V 0.025A Automotive 3-Pin TO-236AB

NJS

NPN 5 GHz寬頻帶晶體管

硅NPN晶體管，采用SOT323 (S-mini)塑料封裝。BFR94AW使用的晶體與采用SOT23封裝的BFR94A相同。 符合AEC-Q101標(biāo)準(zhǔn)\n金屬化鍍金確保極佳的可靠性\n高功率增益;

恩XP