Robust High Performance Low Noise Bipolar RF Transistor

Product Brief The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input

文件：1.88516 Mbytes 頁數(shù)：29 Pages

INFINEON

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低噪聲RF 管基

BFP720ESD 是具有集成 ESD 保護功能的硅鍺碳 (SiGe:C) NPN 異質(zhì)結(jié)寬帶雙極射頻晶體管 (HBT)。 ? 高端 RF 性能與穩(wěn)健性的獨特組合：21 dBm 最大 RF 輸入功率，集成保護電路帶來 2 kV ESD 穩(wěn)健性 (HBM)\n? 高增益 Gms = 26 dB (2.4 GHz 時) 和 Gma = 19.5 dB (5.5 GHz 時)、3 V、15 mA\n? OIP3 = 22 dBm (5.5 GHz 時)、3 V 和 15 mA 低電流消耗;

Infineon

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C Heterojunction Wideband RF Bipolar Transistor

Product Brief The BFP720F is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 25 mA. Th

文件：1.96386 Mbytes 頁數(shù)：26 Pages

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Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.56031 Mbytes 頁數(shù)：25 Pages

INFINEON

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Robust High Performance Low Noise Bipolar RF Transistor

文件：1.94228 Mbytes 頁數(shù)：29 Pages

INFINEON

英飛凌