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          首頁(yè) >BFG3>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          BFG325WSLASHXR

          NPN 14 GHz wideband transistor

          General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

          文件:85.33 Kbytes 頁(yè)數(shù):12 Pages

          PHI

          PHI

          PHI

          BFG325WSLASHXR

          絲?。?a target="_blank" title="Marking" href="/a8/marking.html">A8;Package:SOT343R;NPN 14 GHz wideband transistor

          General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability Applications ? Intended for Radio Frequency (RF) fro

          文件:178.93 Kbytes 頁(yè)數(shù):13 Pages

          恩XP

          恩XP

          BFG325W-XR

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages

          恩XP

          恩XP

          BFG325W-XR

          NPN 14 GHz wideband transistor

          General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

          文件:85.33 Kbytes 頁(yè)數(shù):12 Pages

          PHI

          PHI

          PHI

          BFG325W-XR-1

          NPN 14 GHz wideband transistor

          General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

          文件:85.33 Kbytes 頁(yè)數(shù):12 Pages

          PHI

          PHI

          PHI

          BFG325-XR

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages

          恩XP

          恩XP

          BFG35

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁(yè)數(shù):130 Pages

          恩XP

          恩XP

          BFG35

          NPN 4 GHz wideband transistor

          DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.

          文件:91.67 Kbytes 頁(yè)數(shù):16 Pages

          PHI

          PHI

          PHI

          BFG31_15

          PNP 5 GHz wideband transistor

          文件:228.03 Kbytes 頁(yè)數(shù):9 Pages

          PHI

          PHI

          PHI

          BFG310_15

          NPN 14 GHz wideband transistor

          文件:81.37 Kbytes 頁(yè)數(shù):12 Pages

          JMNIC

          錦美電子

          晶體管資料

          • 型號(hào):

            BFG35

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            甚高頻 (VHF)_超高頻/特高頻 (UHF)_寬頻帶放大

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

            25V

          • 最大電流允許值:

            0.15A

          • 最大工作頻率:

            4GHZ

          • 引腳數(shù):

            4

          • 可代換的型號(hào):

            BFG135,

          • 最大耗散功率:

          • 放大倍數(shù):

          • 圖片代號(hào):

            H-99

          • vtest:

            25

          • htest:

            4000000000

          • atest:

            0.15

          • wtest:

            0

          技術(shù)參數(shù)

          • 功能描述:

            TRANSISTOR

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          恩XP
          24+
          SOT223
          1524
          原裝正品,現(xiàn)貨庫(kù)存,1小時(shí)內(nèi)發(fā)貨
          詢價(jià)
          恩XP
          24+
          SOT223
          9750
          絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)!
          詢價(jià)
          恩XP
          25+
          N/A
          18798
          原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開(kāi)票。
          詢價(jià)
          恩XP
          24+
          SOT-223
          6219
          新進(jìn)庫(kù)存/原裝
          詢價(jià)
          PHI
          24+/25+
          2986
          原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
          詢價(jià)
          恩XP
          12+
          SOT223
          15000
          全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
          詢價(jià)
          PHI
          25+
          SOT-223
          355
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢價(jià)
          PHI
          24+
          SOT-223
          3000
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          PHI
          25+
          SOT223
          2987
          只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電!
          詢價(jià)
          恩XP
          23+
          SOT-223
          11846
          一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價(jià)
          更多BFG3供應(yīng)商 更新時(shí)間2026-1-18 10:01:00
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