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          首頁 >BFG19>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BFG197/X

          NPN 7 GHz wideband transistor

          DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. FEATURES ? High power gain ? Low nois

          文件:93.07 Kbytes 頁數(shù):13 Pages

          PHI

          PHI

          PHI

          BFG197/XR

          NPN 7 GHz wideband transistor

          DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. FEATURES ? High power gain ? Low nois

          文件:93.07 Kbytes 頁數(shù):13 Pages

          PHI

          PHI

          PHI

          BFG197SLASHX

          NPN 7 GHz wideband transistor

          DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. FEATURES ? High power gain ? Low nois

          文件:93.07 Kbytes 頁數(shù):13 Pages

          PHI

          PHI

          PHI

          BFG197SLASHXR

          NPN 7 GHz wideband transistor

          DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. FEATURES ? High power gain ? Low nois

          文件:93.07 Kbytes 頁數(shù):13 Pages

          PHI

          PHI

          PHI

          BFG198

          NPN 8 GHz wideband transistor

          DESCRIPTION NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.

          文件:95.83 Kbytes 頁數(shù):12 Pages

          PHI

          PHI

          PHI

          BFG198

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BFG19S

          NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

          ? For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA ? CECC-type available: CECC 50 002/259

          文件:49.37 Kbytes 頁數(shù):6 Pages

          SIEMENS

          西門子

          BFG19S

          NPN Silicon RF Transistor

          NPN Silicon RF Transistor ? For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA

          文件:99.17 Kbytes 頁數(shù):6 Pages

          INFINEON

          英飛凌

          BFG193

          NPN Silicon RF Transistor

          文件:62.15 Kbytes 頁數(shù):6 Pages

          INFINEON

          英飛凌

          BFG193_07

          NPN Silicon RF Transistor

          文件:62.15 Kbytes 頁數(shù):6 Pages

          INFINEON

          英飛凌

          晶體管資料

          • 型號:

            BFG193

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產廠家:

          • 制作材料:

            Si-NPN

          • 性質:

            超高頻/特高頻 (UHF)_寬頻帶放大 (A)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

            20V

          • 最大電流允許值:

            0.08A

          • 最大工作頻率:

            8GHZ

          • 引腳數(shù):

            3

          • 可代換的型號:

          • 最大耗散功率:

          • 放大倍數(shù):

          • 圖片代號:

            H-99

          • vtest:

            20

          • htest:

            8000000000

          • atest:

            0.08

          • wtest:

            0

          技術參數(shù)

          • Number of Elements per Chip:

            1

          • Minimum Operating Temperature:

            -55°C

          • Minimum DC Current Gain:

            70@30mA@8V

          • Maximum Transition Frequency:

            8000(Typ)MHz

          • Maximum Operating Temperature:

            150°C

          • Maximum Emitter Base Voltage:

            2V

          • Maximum DC Collector Current:

            0.08A

          • Maximum Collector Emitter Voltage:

            12V

          • Maximum Collector Base Voltage:

            20V

          • Material:

            Si

          • Configuration:

            Single Dual Emitter

          供應商型號品牌批號封裝庫存備注價格
          INFINEON
          23+
          SOT-223
          11846
          一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價
          恩XP
          2023+環(huán)保現(xiàn)貨
          SOT-223
          10
          專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
          詢價
          INFINEON
          23+
          SOT-223
          8000
          專注配單,只做原裝進口現(xiàn)貨
          詢價
          INFINEON
          23+
          SOT-223
          7000
          詢價
          INF
          24+
          NA
          6000
          只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718
          詢價
          24+
          2000
          全新
          詢價
          SIEMENS
          24+/25+
          3314
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          恩XP
          12+
          SOT223
          15000
          全新原裝,絕對正品,公司現(xiàn)貨供應。
          詢價
          INFINEON
          2016+
          SOT-223
          3500
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          恩XP
          23+
          SOT-223
          5000
          原裝正品,假一罰十
          詢價
          更多BFG19供應商 更新時間2026-1-19 14:56:00
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