| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
BFG193 | Low Noise Figure DESCRIPTION ? Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ? High Gain ︱ S21e︱ 2 = 13.5 dB TYP. @VCE= 8 V,IC = 30 mA,f = 900 MHz APPLICATIONS ? Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. 文件:185.15 Kbytes 頁(yè)數(shù):5 Pages | ISC 無(wú)錫固電 | ISC | |
BFG193 | Silicon NPN RF Transistor DESCRIPTION ? Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ? High Gain ︱ S21e︱ 2 = 13.5 dB TYP. @VCE= 8 V,IC = 30 mA,f = 900 MHz APPLICATIONS ? Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. 文件:73.92 Kbytes 頁(yè)數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
BFG193 | NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor ? For low noise, high-gain amplifiers up to 2GHz ? For linear broadband amplifiers ? fT = 8GHz F = 1.3dB at 900MHz 文件:48.45 Kbytes 頁(yè)數(shù):6 Pages | SIEMENS 西門(mén)子 | SIEMENS | |
BFG193 | NPN Silicon RF Transistor NPN Silicon RF Transistor ? For low noise, high-gain amplifiers up to 2 GHz ? For linear broadband amplifiers ? fT = 8 GHz F = 1.3 dB at 900 MHz 文件:59.73 Kbytes 頁(yè)數(shù):6 Pages | INFINEON 英飛凌 | INFINEON | |
BFG193 | NPN Silicon RF Transistor 文件:62.15 Kbytes 頁(yè)數(shù):6 Pages | INFINEON 英飛凌 | INFINEON | |
BFG193 | NPN Silicon RF Transistor ? For low noise, high-gain amplifiers up to 2 GHz\n? For linear broadband amplifiers\n? fT = 8 GHz\n?? F = 1.3 dB at 900 MHz | Infineon 英飛凌 | Infineon | |
BFG193 | Trans GP BJT NPN 12V 0.08A Automotive 4-Pin(3+Tab) SOT-223 | NJS | NJS | |
NPN Silicon RF Transistor 文件:62.15 Kbytes 頁(yè)數(shù):6 Pages | INFINEON 英飛凌 | INFINEON |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠(chǎng)家:
- 制作材料:
Si-NPN
- 性質(zhì):
超高頻/特高頻 (UHF)_寬頻帶放大 (A)
- 封裝形式:
貼片封裝
- 極限工作電壓:
20V
- 最大電流允許值:
0.08A
- 最大工作頻率:
8GHZ
- 引腳數(shù):
3
- 可代換的型號(hào):
- 最大耗散功率:
- 放大倍數(shù):
- 圖片代號(hào):
H-99
- vtest:
20
- htest:
8000000000
- atest:
0.08
- wtest:
0
技術(shù)參數(shù)
- Number of Elements per Chip:
1
- Minimum Operating Temperature:
-55°C
- Minimum DC Current Gain:
70@30mA@8V
- Maximum Transition Frequency:
8000(Typ)MHz
- Maximum Operating Temperature:
150°C
- Maximum Emitter Base Voltage:
2V
- Maximum DC Collector Current:
0.08A
- Maximum Collector Emitter Voltage:
12V
- Maximum Collector Base Voltage:
20V
- Material:
Si
- Configuration:
Single Dual Emitter
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
24+ |
標(biāo)準(zhǔn)封裝 |
9698 |
原廠(chǎng)渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開(kāi)票。 |
詢(xún)價(jià) | ||
PHI |
23+ |
1688 |
房間現(xiàn)貨庫(kù)存:QQ:373621633 |
詢(xún)價(jià) | |||
INFINEON |
24+ |
SOT-223 |
38200 |
新進(jìn)庫(kù)存/原裝 |
詢(xún)價(jià) | ||
恩XP |
12+ |
SOT223 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢(xún)價(jià) | ||
INFNEON |
24+ |
TO223 |
21322 |
公司原廠(chǎng)原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢(xún)價(jià) | ||
PHI |
24+ |
SOT223 |
5000 |
只做原裝公司現(xiàn)貨 |
詢(xún)價(jià) | ||
PHI |
25+ |
SOT223 |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電! |
詢(xún)價(jià) | ||
INFINEON |
23+ |
SOT-223 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢(xún)價(jià) | ||
PHI |
24+ |
SOT89 |
115 |
現(xiàn)貨供應(yīng) |
詢(xún)價(jià) | ||
Infineon |
25+ |
SOT223 |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) |
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