N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features ? Integrated gate protection diodes ? Low noise figure ? Low feedback capacitance ? High cross modulation performance ? Low input capacitance ? High AGC-range ? High gain ? Lead (Pb)-free component ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

絲?。?a target="_blank" title="Marking" href="/wmo/marking.html">WMO；Package：SOT-343R；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features ? Integrated gate protection diodes ? Low noise figure ? Low feedback capacitance ? High cross modulation performance ? Low input capacitance ? High AGC-range ? High gain ? Lead (Pb)-free component ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

絲?。?a target="_blank" title="Marking" href="/wmo/marking.html">WMO；Package：SOT-343R；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-channel dual-gate MOSFET

Overview Archived content is no longer updated and is made available for historical reference only.\nDepletion type Field-Effect Transistor in a plastic SOT143 package. High forward transfer admittance to input capacitance ratio\nLow noise gain controlled amplifier up to 1 GHz;

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