絲?。?a target="_blank" title="Marking" href="/wmo/marking.html">WMO；Package：SOT-343R；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features ? Integrated gate protection diodes ? Low noise figure ? Low feedback capacitance ? High cross modulation performance ? Low input capacitance ? High AGC-range ? High gain ? Lead (Pb)-free component ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

絲?。?a target="_blank" title="Marking" href="/wmo/marking.html">WMO；Package：SOT-343R；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)

? Short-channel transistor with high S/C quality factor ? For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998

文件：30.08 Kbytes 頁數(shù)：2 Pages

SIEMENS

西門子

Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode ? Short-channel transistor with high S / C quality factor ? For low-noise, gain-controlled input stage up to 1 GHz

文件：249.05 Kbytes 頁數(shù)：6 Pages

INFINEON

英飛凌

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES ? High forward

文件：94.6 Kbytes 頁數(shù)：12 Pages

PHI

PHI