| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
BF4 | Mounting flange 文件:510.73 Kbytes 頁(yè)數(shù):1 Pages | PF 倍加福 | PF | |
絲?。?strong>BF4;Package:SMA;400 W Transient Voltage Suppressor 1. General description 400 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits ? Rated peak pulse power at 10/1000 μs waveform: PPPM = 400 W ? Reverse standoff 文件:217.72 Kbytes 頁(yè)數(shù):12 Pages | NEXPERIA 安世 | NEXPERIA | ||
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP [FACON] single phase moulded bridges 0,8 Amp to 1,5 Amp single phase moulded bridges 3 A to 6 A moulded single phase bridges 10 A to 35 A single phase moulded bridges 10 A to 50 A moulded single phase bridges 25 A to 50 A 文件:426.16 Kbytes 頁(yè)數(shù):5 Pages | ETCList of Unclassifed Manufacturers 未分類(lèi)制造商 | ETC | ||
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range. 文件:54.98 Kbytes 頁(yè)數(shù):3 Pages | SIEMENS 西門(mén)子 | SIEMENS | ||
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range. 文件:54.98 Kbytes 頁(yè)數(shù):3 Pages | SIEMENS 西門(mén)子 | SIEMENS | ||
N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks 文件:36.05 Kbytes 頁(yè)數(shù):6 Pages | PHI PHI | PHI | ||
N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks 文件:36.05 Kbytes 頁(yè)數(shù):6 Pages | PHI PHI | PHI | ||
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range. 文件:54.98 Kbytes 頁(yè)數(shù):3 Pages | SIEMENS 西門(mén)子 | SIEMENS | ||
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range. 文件:54.98 Kbytes 頁(yè)數(shù):3 Pages | SIEMENS 西門(mén)子 | SIEMENS | ||
N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks 文件:36.05 Kbytes 頁(yè)數(shù):6 Pages | PHI PHI | PHI |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-PNP
- 性質(zhì):
甚高頻 (VHF)
- 封裝形式:
直插封裝
- 極限工作電壓:
- 最大電流允許值:
- 最大工作頻率:
>700MHZ
- 引腳數(shù):
3
- 可代換的型號(hào):
BF272,BF316,BF372,BF500,BF509,BF516,BF606,BF914,BF939,3CG122F,
- 最大耗散功率:
- 放大倍數(shù):
- 圖片代號(hào):
C-63
- vtest:
0
- htest:
700000100
- atest:
0
- wtest:
0
技術(shù)參數(shù)
- 電壓駐波比:
1.25
- 平均功率:
250
- 峰值功率:
10
- 波導(dǎo)型號(hào):
BJ40
- 外形尺寸:
250
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
25+ |
SOT6.M |
3629 |
原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來(lái)電! |
詢(xún)價(jià) | |||
恩XP |
TO-92 |
1000 |
原裝長(zhǎng)期供貨! |
詢(xún)價(jià) | |||
ON |
24+/25+ |
575 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢(xún)價(jià) | |||
PHI |
13+ |
TO-92 |
21263 |
原裝分銷(xiāo) |
詢(xún)價(jià) | ||
BF |
36118 |
SOT23-3 |
2015 |
專(zhuān)業(yè)代理鋰電充電管理IC,型號(hào)齊全,公司優(yōu)勢(shì)產(chǎn)品 |
詢(xún)價(jià) | ||
KEC |
25+ |
TO-92 |
16000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
國(guó)產(chǎn) |
23+ |
TO-126 |
5000 |
原裝正品,假一罰十 |
詢(xún)價(jià) | ||
PHI |
24+ |
TO-92 |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢(xún)價(jià) | ||
PHI |
24+ |
38593 |
詢(xún)價(jià) | ||||
PHI |
05+ |
原廠原裝 |
40051 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
更多- COS5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- TL074
相關(guān)庫(kù)存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074

