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          首頁 >BF410>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BF410

          LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

          Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.

          文件:54.98 Kbytes 頁數(shù):3 Pages

          SIEMENS

          西門子

          BF410

          LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

          Infineon

          英飛凌

          BF410A

          LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

          Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.

          文件:54.98 Kbytes 頁數(shù):3 Pages

          SIEMENS

          西門子

          BF410A

          N-channel silicon field-effect transistors

          DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

          文件:36.05 Kbytes 頁數(shù):6 Pages

          PHI

          PHI

          PHI

          BF410B

          N-channel silicon field-effect transistors

          DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

          文件:36.05 Kbytes 頁數(shù):6 Pages

          PHI

          PHI

          PHI

          BF410B

          LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

          Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.

          文件:54.98 Kbytes 頁數(shù):3 Pages

          SIEMENS

          西門子

          BF410C

          N-channel silicon field-effect transistors

          DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

          文件:36.05 Kbytes 頁數(shù):6 Pages

          PHI

          PHI

          PHI

          BF410C

          LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

          Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.

          文件:54.98 Kbytes 頁數(shù):3 Pages

          SIEMENS

          西門子

          BF410D

          N-channel silicon field-effect transistors

          DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

          文件:36.05 Kbytes 頁數(shù):6 Pages

          PHI

          PHI

          PHI

          BF410D

          LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

          Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.

          文件:54.98 Kbytes 頁數(shù):3 Pages

          SIEMENS

          西門子

          詳細參數(shù)

          • 型號:

            BF410

          • 制造商:

            INFINEON

          • 制造商全稱:

            Infineon Technologies AG

          • 功能描述:

            LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

          供應(yīng)商型號品牌批號封裝庫存備注價格
          PHI
          24+
          TO-92
          1300
          詢價
          PHI
          05+
          原廠原裝
          28051
          只做全新原裝真實現(xiàn)貨供應(yīng)
          詢價
          PHI
          23+
          TO-92
          10000
          原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳
          詢價
          PHI
          23+
          2800
          正品原裝貨價格低
          詢價
          ON
          23+
          TO-92
          2418
          專注配單,只做原裝進口現(xiàn)貨
          詢價
          PHI
          24+
          TO-92
          6000
          只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718
          詢價
          BBT
          1736+
          DIP
          15238
          原廠優(yōu)勢渠道
          詢價
          sie
          25+
          500000
          行業(yè)低價,代理渠道
          詢價
          SIEMENS
          2025+
          TO-92
          3715
          全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
          詢價
          ISC
          20+
          TO-126
          15800
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          更多BF410供應(yīng)商 更新時間2026-1-18 16:30:00
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