2.00mm Pitch Socket Dual Row, Surface Mount, Dual Entry

文件：90.82 Kbytes 頁數(shù)：1 Pages

GCT

Dual N-channel dual gate MOSFET

General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between th

文件：252.04 Kbytes 頁數(shù)：21 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：112.73 Kbytes 頁數(shù)：15 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：112.73 Kbytes 頁數(shù)：15 Pages

PHI

PHI

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：112.73 Kbytes 頁數(shù)：15 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：131.09 Kbytes 頁數(shù)：15 Pages

PHI

PHI