Plastic-Encapsulate MOSFETS

GENERRAL DESCRIPTION This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). FEATURE High-Side Switching Low On-Resistance Low Threshold Fast Switching Speed ESD protected APPLICATION Drivers:Relays, Solenoids, Lamps, Hammers,

文件：723.75 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network

Silicon N-Channel MOSFET Tetrode ? For low noise, high gain controlled input stages up to 1GHz ? Operating voltage 12V ? Integrated stabilized bias network

文件：33.42 Kbytes 頁數(shù)：4 Pages

SIEMENS

西門子

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

Silicon N-Channel MOSFET Tetrode ? For low noise, high gain controlled input stages up to 1GHz ? Operating voltage 5V ? Integrated stabilized bias network

文件：43.75 Kbytes 頁數(shù)：4 Pages

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西門子

SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)

SILICON N-CHANNEL MOSFET TETRODE ? For low-noise, gain-controlled input stages up to 1GHz ? Operating voltage 12V ? Integrated bias Network

文件：359.34 Kbytes 頁數(shù)：3 Pages

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西門子