Surface mount Si-Epitaxial PlanarTransistors

? Power dissipation 250 mW ? Plastic case SOT-23 (TO-236) ? Weight approx. 0.01 g ? Plastic material has UL classification 94V-0 ? Standard packaging taped and reeled

文件：172.65 Kbytes 頁數(shù)：2 Pages

DIOTEC

德歐泰克

NPN Darlington transistors

DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. FEATURES ? Medium current (max. 500 mA) ? Low voltage (max. 60 V) ? High DC current gain (min. 20000). APPLICATIONS ? Preamplifier input applications.

文件：122.48 Kbytes 頁數(shù)：7 Pages

恩XP

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● High Collector Current ● High Current Gain

文件：336.04 Kbytes 頁數(shù)：1 Pages

HTSEMI

金譽(yù)半導(dǎo)體

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Collector Current ● High Current Gain

文件：1.99588 Mbytes 頁數(shù)：4 Pages

JIANGSU

長電科技

NPN Darlington Transistors

NPN Darlington Transistors for preamplifier input applications

文件：131.21 Kbytes 頁數(shù)：2 Pages

SEMTECH_ELEC

先之科半導(dǎo)體

NPN Silicon Darlington Transistors (For general AF applications High collector current)

NPN Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: BCV 26, BCV 46 (PNP)

文件：140.64 Kbytes 頁數(shù)：4 Pages

SIEMENS

西門子

絲印：FG；Package：SOT-23；NPN Darlington Amplifier Transistor

FEATURES ● Complementary to BCV26,BCV46. ● High collector current. ● High current gain. ● For general AF applications. ● Complementary types:BCV26,BCV46 APPLICATIONS ● NPN silicon darlington transistor.

文件：770.09 Kbytes 頁數(shù)：4 Pages

LUGUANG

魯光電子

絲印：FG；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES High Collector Current High Current Gain

文件：2.8621 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

NPN Darlington Transistors

NPN Darlington Transistors for preamplifier input applications

文件：857.9 Kbytes 頁數(shù)：2 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

絲?。?a target="_blank" title="Marking" href="/fg/marking.html">FG；Package：SOT23；NPN Darlington transistor

1. General description NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: BCV26 2. Features and benefits ? Medium current of 500 mA ? Low voltage of 60 V ? High DC current gain of minimum 2000 3. Applications ? Preamplif

文件：212.34 Kbytes 頁數(shù)：8 Pages

NEXPERIA

安世