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          首頁 >BCV>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BCV26

          PNP Darlington transistors

          DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. FEATURES ? High current (max. 500 mA) ? Low voltage (max. 60 V) ? Very high DC current gain (min. 10000). APPLICATIONS ? Where very high amplification is required.

          文件:43.89 Kbytes 頁數(shù):8 Pages

          PHI

          PHI

          PHI

          BCV26

          PNP Silicon Darlington Transistors

          PNP Silicon Darlington Transistors ? For general AF applications ? High collector current ? High current gain ? Complementary types: BCV27, BCV47 (NPN) ? Pb-free (RoHS compliant) package1) ? Qualified according AEC Q101

          文件:49.55 Kbytes 頁數(shù):5 Pages

          INFINEON

          英飛凌

          BCV26_V01

          PNP Darlington Transistor

          Description This device is designed for applications requiring extremely high current gain at collector currents to 800 mA. Sourced from Process 61.

          文件:111.16 Kbytes 頁數(shù):5 Pages

          ONSEMI

          安森美半導(dǎo)體

          BCV27

          NPN Darlington transistors

          DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. FEATURES ? Medium current (max. 500 mA) ? Low voltage (max. 60 V) ? High DC current gain (min. 20000). APPLICATIONS ? Preamplifier input applications.

          文件:43.92 Kbytes 頁數(shù):8 Pages

          PHI

          PHI

          PHI

          BCV27

          NPN Silicon Darlington Transistors

          NPN Silicon Darlington Transistors ? For general AF applications ? High collector current ? High current gain ? Complementary types: BCV26, BCV46 (PNP) ? Pb-free (RoHS compliant) package ? Qualified according AEC Q101

          文件:49.5 Kbytes 頁數(shù):5 Pages

          INFINEON

          英飛凌

          BCV27

          SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS

          FEATURES * High VCEO * Low saturation voltage

          文件:54.81 Kbytes 頁數(shù):1 Pages

          DIODES

          美臺(tái)半導(dǎo)體

          BCV27

          NPN SILICON PLANAR DARLINGTON TRANSISTORS

          FEATURES * High VCEO * Low saturation voltage

          文件:49.13 Kbytes 頁數(shù):1 Pages

          ZETEX

          BCV27

          SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS

          FEATURES * High VCEO * Low saturation voltage

          文件:253.31 Kbytes 頁數(shù):1 Pages

          ZETEX

          BCV27

          NPN Darlington Transistor

          NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.

          文件:52.64 Kbytes 頁數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          BCV27

          NPN Darlington Transistor

          Description This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from process 05.

          文件:115.34 Kbytes 頁數(shù):4 Pages

          ONSEMI

          安森美半導(dǎo)體

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          更多BCV供應(yīng)商 更新時(shí)間2026-1-21 18:05:00
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