絲印：BC307；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

文件：1.483 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?strong>BC307；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

文件：1.483 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?strong>BC307；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

文件：1.483 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲印：BC307；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Amplifier dissipation NPN Silicon

文件：1.483 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

Amplifier Transistors(PNP)

Amplifier Transistors PNP Silicon

文件：110.68 Kbytes 頁數(shù)：4 Pages

MOTOROLA

摩托羅拉

PNP general purpose transistors

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC237 and BC237B. FEATURES ? Low current (max. 100 mA) ? Low voltage (max. 45 V). APPLICATIONS ? General purpose switching and amplification.

文件：52.42 Kbytes 頁數(shù)：8 Pages

PHI

PHI

PNP EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications ? Low Noise: BC309

文件：69.33 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, LOW NOISE AMPLIFIER)

GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES ? High Voltage : BC307 VCEO=-45V. ? Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). ? For Complementary With NPN type BC237/238/239.

文件：144.25 Kbytes 頁數(shù)：2 Pages

KEC

KEC(Korea Electronics)

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

文件：225.47 Kbytes 頁數(shù)：4 Pages

MICRO-ELECTRONICS

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications

文件：145.87 Kbytes 頁數(shù)：2 Pages

SEMTECH_ELEC

先之科半導(dǎo)體