絲印：BC516；Package：TO-92；PNP Darlington Transistor

文件：254.88 Kbytes 頁數(shù)：4 Pages

ONSEMI

安森美半導體

絲印：BC516；Package：TO-92；PNP Darlington Transistor

文件：254.88 Kbytes 頁數(shù)：4 Pages

ONSEMI

安森美半導體

PNP Darlington Transistor

Features ? This Device is Designed for Applications Reguiring Extremely High Current Gain at Currents to 1 A. ? This is a Pb?Free Device

文件：162.4 Kbytes 頁數(shù)：3 Pages

ONSEMI

安森美半導體

PNP Darlington transistor

DESCRIPTION PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517. FEATURES ? High current (max. 500 mA) ? Low voltage (max. 30 V) ? Very high DC current gain (min. 30000). APPLICATIONS ? Where very high amplification is required.

文件：44.1 Kbytes 頁數(shù)：8 Pages

PHI

PHI

PNP Silicon Darlington Transistor (High current gain High collector current)

PNP Silicon Darlington Transistor ● High current gain ● High collector current ● Complementary type: BC 517 (NPN)

文件：138.8 Kbytes 頁數(shù)：4 Pages

SIEMENS

西門子

PNP Darlington Transistor

PNP Darlington Transistor ? This device is designed for applications reguiring extremely high current gain at currents to 1mA. ? Sourced from process 61.

文件：25.26 Kbytes 頁數(shù)：3 Pages

FAIRCHILD

仙童半導體

COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR

The BC516(PNP) and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.

文件：68.35 Kbytes 頁數(shù)：1 Pages

MICRO-ELECTRONICS

PNP Silicon Darlington Transistor

PNP Silicon Darlington Transistor

文件：78.3 Kbytes 頁數(shù)：1 Pages

SEMTECH_ELEC

先之科半導體

TO-92 PACKAGE

TO-92 PACKAGE

文件：373.63 Kbytes 頁數(shù)：1 Pages

KEC

KEC(Korea Electronics)

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● High Collector Current

文件：401.89 Kbytes 頁數(shù)：3 Pages

JIANGSU

長電科技