絲?。?a target="_blank" title="Marking" href="/orange/marking.html">orange；Package：DO-35；Silicon Variable Capacitance Diodes

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Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.5 dB typ. at f = 900 MHz ? High gain; PG = 24 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions. ? Provide

文件：187.96 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.5 dB typ. at f = 900 MHz ? High gain; PG = 24 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions. ? Provide

文件：187.96 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES ? Input π Filter ? Fully Regulated Outputs ? Industry Standard Pinouts ? 5, 12, 24, 28, and 48 VDC Inputs ? Ripple and Noise Less Than 50mVpp ? Input/Output Isolation

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