Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.5 dB typ. at f = 900 MHz ? High gain; PG = 24 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions. ? Provide

文件：187.96 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.5 dB typ. at f = 900 MHz ? High gain; PG = 24 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions. ? Provide

文件：187.96 Kbytes 頁數(shù)：9 Pages

RENESAS

瑞薩

Transistors>Amplifiers/MOSFETs

Renesas

瑞薩

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES ? Input π Filter ? Fully Regulated Outputs ? Industry Standard Pinouts ? 5, 12, 24, 28, and 48 VDC Inputs ? Ripple and Noise Less Than 50mVpp ? Input/Output Isolation

文件：45.83 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor ? Switching circuit, inverter, interface circuit, driver circuit ? Built in bias resistor (R1=2.2k?, R2=10k?)

文件：35.58 Kbytes 頁數(shù)：4 Pages

SIEMENS

西門子

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor ? Built in bias resistor (R1= 2.2 k?, R2= 10 k?) ? Pb-free (RoHS compliant) package ? Qualified according AEC Q101

文件：114.66 Kbytes 頁數(shù)：4 Pages

INFINEON

英飛凌