Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Superior cross modulation characteristics. ? High gain; (PG = 28 dB typ. at f = 200 MHz) ? Wide supply voltage range; Appli

文件：59.52 Kbytes 頁數(shù)：10 Pages

HITACHIHitachi Semiconductor

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UHF variable capacitance diode

DESCRIPTION The BB405B is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES ? Excellent linearity ? Matched to 3 ? Hermetically sealed leaded glass SOD68 (DO-34) package

文件：30.69 Kbytes 頁數(shù)：4 Pages

PHI

PHI

UHF variable capacitance diode

DESCRIPTION The BB405B is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES ? Excellent linearity ? Matched to 3 ? Hermetically sealed leaded glass SOD68 (DO-34) package

文件：30.69 Kbytes 頁數(shù)：4 Pages

PHI

PHI

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Superior cross modulation characteristics. ? High gain; (PG = 28 dB typ. at f = 200 MHz) ? Wide supply voltage range; Appli

文件：59.52 Kbytes 頁數(shù)：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Build in Biasing Circuit MOS FET IC\nUHF/VHF RF Amplifier ?? Build in Biasing Circuit; To reduce using parts cost & PC board space.\n?? High gain;\n?? Wide supply voltage range; Applicable with 5V to 9V supply voltage.\n?? Provide mini mold packages; MPAK-4R(SOT-143 var.);

HITACHI

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