中国无码免费,99综合97,大香蕉大香蕉在线,做爱视频网站免费看,人人摸天天操,国产美女A片,在线免费观看ww视频,黄片无码在线观看

<strong id="5lvfi"><dl id="5lvfi"></dl></strong>

<tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>

<th id="5lvfi"><progress id="5lvfi"></progress></th>

<strong id="5lvfi"><form id="5lvfi"></form></strong>

<strong id="5lvfi"><form id="5lvfi"></form></strong>

<del id="5lvfi"></del>

首頁(yè) >BB501>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
BB501	文件：71.04 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; PG = 21.5 dB typ. at f = 900 MHz ? Low noise; NF = 1.85 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mi 文件：71.04 Kbytes 頁(yè)數(shù)：13 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
BB501	文件：71 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; PG = 21.5 dB typ. at f = 900 MHz ? Low noise; NF = 1.85 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mi 文件：71 Kbytes 頁(yè)數(shù)：13 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
BB501	文件：300 bytes Page：1 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier	HITACHI 日立	HITACHI
BB501C	文件：71 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; PG = 21.5 dB typ. at f = 900 MHz ? Low noise; NF = 1.85 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mi 文件：71 Kbytes 頁(yè)數(shù)：13 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
BB501C	文件：198.46 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; PG = 21.5 dB typ. at f = 900 MHz ? Low noise; NF = 1.85 dB typ. at f = 900 MHz ? Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mi 文件：198.46 Kbytes 頁(yè)數(shù)：10 Pages	RENESAS 瑞薩	RENESAS
BB501CAS-TL-E	文件：198.46 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; PG = 21.5 dB typ. at f = 900 MHz ? Low noise; NF = 1.85 dB typ. at f = 900 MHz ? Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mi 文件：198.46 Kbytes 頁(yè)數(shù)：10 Pages	RENESAS 瑞薩	RENESAS
BB501M	文件：300.86 Kbytes Page：11 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; PG = 21.5 dB typ. at f = 900 MHz ? Low noise; NF = 1.85 dB typ. at f = 900 MHz ? Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mi 文件：300.86 Kbytes 頁(yè)數(shù)：11 Pages	RENESAS 瑞薩	RENESAS
BB501M	文件：71.04 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; PG = 21.5 dB typ. at f = 900 MHz ? Low noise; NF = 1.85 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mi 文件：71.04 Kbytes 頁(yè)數(shù)：13 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
BB501MAS-TL-E	文件：300.86 Kbytes Page：11 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; PG = 21.5 dB typ. at f = 900 MHz ? Low noise; NF = 1.85 dB typ. at f = 900 MHz ? Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mi 文件：300.86 Kbytes 頁(yè)數(shù)：11 Pages	RENESAS 瑞薩	RENESAS
BB501C	文件：300 bytes Page：1 Pages	Transistors>Amplifiers/MOSFETs	Renesas 瑞薩	Renesas

詳細(xì)參數(shù)

型號(hào)：
BB501
制造商：
HITACHI
制造商全稱：
Hitachi Semiconductor
功能描述：
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市弘為電子有限公司	BB501CAS-TL	HITACHI	24+	S0T343	6000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市一線半導(dǎo)體有限公司	BB501MZAS	RENESAS瑞薩/HITACHI日立	24+	SOT-143SOT-23-4	9000	新進(jìn)庫(kù)存/原裝	詢價(jià)
深圳市振宏微科技有限公司	BB501MAS	SOT-143	23+	NA	15659	振宏微專業(yè)只做正品,假一罰百!	詢價(jià)
深圳市華斯頓科技有限公司	BB501MAS-TL	Hitachi	25+23+	Sot-143	32742	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
深圳誠(chéng)思涵科技有限公司	BB501MAS-TL	HITACH	04+	SOT143	200000		詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	BB501MAS-TL	HITACH	20+	SOT143	36800	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票	詢價(jià)
深圳市拓億芯電子有限公司	BB501MAS-TL	HITACHI	25+	SOT143	30000	代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市萊克訊科技有限公司	BB501MAS-TL	HITACHI	1922+	SOT-143	35689	原裝進(jìn)口現(xiàn)貨庫(kù)存專業(yè)工廠研究所配單供貨	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	BB501MEW-TL	RENESAS/瑞薩	23+	SOT-143	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市英瑞爾電子科技有限公司	BB501MAS-TL	HITACH	24+	SOT143	48000	原裝現(xiàn)貨假一賠十	詢價(jià)

更多BB501供應(yīng)商更新時(shí)間2026-1-18 8:01:00

<strong id="5lvfi"><dl id="5lvfi"></dl></strong>

<tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>

<th id="5lvfi"><progress id="5lvfi"></progress></th>

<strong id="5lvfi"><form id="5lvfi"></form></strong>

<strong id="5lvfi"><form id="5lvfi"></form></strong>

<del id="5lvfi"></del>

看国产黄色视频 | 超碰碰人人 | 把美女弄到高潮不断免费视频网站观看 | 人人插视频 | 欧美亚洲一区 |