Silicon Epitaxial Planar Dual Capacitance Diodes

Features: Common cathode

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ETCList of Unclassifed Manufacturers

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Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes)

Silicon Variable Capacitance Diode Preliminary Data ● For FM tuners ● Monolithic chip with common cathode for perfect tracking of both diodes ● Uniform square law characteristics ● Ideal Hifi tuning device when used in Low-distortion back-to back configuration ● Color-coded capacitance subgr

文件：60.17 Kbytes 頁數(shù)：3 Pages

SIEMENS

西門子

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; (PG = 29 dB typ. at f = 200 MHz) ? Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) ? Wide supply voltage range; Applicable with 5V to 9V supply voltage. ? Withstandi

文件：67.88 Kbytes 頁數(shù)：12 Pages

HITACHIHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; (PG = 29 dB typ. at f = 200 MHz) ? Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) ? Wide supply voltage range; Applicable with 5V to 9V supply voltage. ? Withstandi

文件：217.81 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; (PG = 29 dB typ. at f = 200 MHz) ? Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) ? Wide supply voltage range; Applicable with 5V to 9V supply voltage. ? Withstandi

文件：217.81 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; (PG = 29 dB typ. at f = 200 MHz) ? Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) ? Wide supply voltage range; Applicable with 5V to 9V supply voltage. ? Withstanding t

文件：301.75 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; (PG = 29 dB typ. at f = 200 MHz) ? Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) ? Wide supply voltage range; Applicable with 5V to 9V supply voltage. ? Withstanding t

文件：68.48 Kbytes 頁數(shù)：12 Pages

HITACHIHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; (PG = 29 dB typ. at f = 200 MHz) ? Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) ? Wide supply voltage range; Applicable with 5V to 9V supply voltage. ? Withstanding t

文件：301.75 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

? Build in Biasing Circuit; To reduce using parts cost & PC board space.\n? High gain;\n?? (PG = 29 dB typ. at f = 200 MHz)\n? Low noise characteristics;\n?? (NF = 1.2 dB typ. at f = 200 MHz)\n? Wide supply voltage range;\n?? Applicable with 5V to 9V supply voltage.\n? Withstanding to ESD;\n?? Build;

HITACHI

日立

Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes)

Infineon

英飛凌