Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; (PG = 29 dB typ. at f = 200 MHz) ? Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) ? Wide supply voltage range; Applicable with 5V to 9V supply voltage. ? Withstanding t

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Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; (PG = 29 dB typ. at f = 200 MHz) ? Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) ? Wide supply voltage range; Applicable with 5V to 9V supply voltage. ? Withstanding t

文件：301.75 Kbytes 頁數：10 Pages

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Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? High gain; (PG = 29 dB typ. at f = 200 MHz) ? Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) ? Wide supply voltage range; Applicable with 5V to 9V supply voltage. ? Withstanding t

文件：301.75 Kbytes 頁數：10 Pages

RENESAS

瑞薩

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

? Build in Biasing Circuit; To reduce using parts cost & PC board space.\n? High gain;\n?? (PG = 29 dB typ. at f = 200 MHz)\n? Low noise characteristics;\n?? (NF = 1.2 dB typ. at f = 200 MHz)\n? Wide supply voltage range;\n?? Applicable with 5V to 9V supply voltage.\n? Withstanding to ESD;\n?? Build;

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