UHF mixer diode

DESCRIPTION Planar Schottky barrier diode encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) glass package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. FEATURES ? Low forward voltage ? Hermetically-sealed leaded glass package ? Low diode capacitance. APPLICATIO

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PHI

PHI

Schottky Barrier Diodes

Schottky Barrier Diodes

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)

NPN Silicon RF Transistor ? For low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA ? fT = 8 GHz F = 1.4 dB at 900 MHz ? Two (galvanic) internal isolated Transistors in one package

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SIEMENS

西門子

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor ? For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ? fT = 8 GHz, NFmin = 0.9 dB at 900 MHz ? Two (galvanic) internal isolated Transistors in one package ? For orientation in reel see package information below ? Ea

文件：60.19 Kbytes 頁數(shù)：6 Pages

INFINEON

英飛凌

NPN Silicon RF Transistor

文件：127.17 Kbytes 頁數(shù)：6 Pages

INFINEON

英飛凌