BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES ? Input π Filter ? Fully Regulated Outputs ? Industry Standard Pinouts ? 5, 12, 24, 28, and 48 VDC Inputs ? Ripple and Noise Less Than 50mVpp ? Input/Output Isolation

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Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Features ? Build in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz ? High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz ? Withstanding to ESD; Build in ESD absorbing diode.

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HITACHIHitachi Semiconductor

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Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz ? High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz ? Withstanding to ESD; Built in ESD absorbing diode

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Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Features ? Built in Biasing Circuit; To reduce using parts cost & PC board space. ? Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz ? High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz ? Withstanding to ESD; Built in ESD absorbing diode. W

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