All Dimension In Mm

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E-SWITCH

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output power

文件：64.14 Kbytes 頁數(shù)：4 Pages

INFINEON

英飛凌

High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

Description The PTF080101M is an unmatched 10-watt GOLDMOS? FETintended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features ? Typical EDGE performance - Average out

文件：258.49 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output power

文件：172.75 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌