RF Power Field Effect Transistor

865--960 MHz, 28 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. ? Typical Single--Carrier W--CDMA Perfor

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FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

N--Channel Enhancement--Mode Lateral MOSFETs

Features ? Greater Negative Gate--Source Voltage Range for Improved Class C Operation ? Designed for Digital Predistortion Error Correction Systems ? Optimized for Doherty Applications ? In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

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恩XP

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features ? High terminal impedances for optimal broadband performance ? Advanced high performance in--package Doherty ? Able to withstand extremely high output VSWR and broadband operating conditions

文件：414.55 Kbytes 頁數(shù)：18 Pages

恩XP

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features ? Designed for wide instantaneous bandwidth ap

文件：502.63 Kbytes 頁數(shù)：18 Pages

恩XP

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features ? Designed for wide instantaneous bandwidth ap

文件：502.63 Kbytes 頁數(shù)：18 Pages

恩XP

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features ? Designed for wide instantaneous bandwidth ap

文件：502.63 Kbytes 頁數(shù)：18 Pages

恩XP

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. ? Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

文件：1.4439 Mbytes 頁數(shù)：19 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. ? Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

文件：1.4439 Mbytes 頁數(shù)：19 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

文件：574.41 Kbytes 頁數(shù)：15 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor

865--960 MHz, 28 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. ? Typical Single--Carrier W--CDMA Perfor

文件：813.97 Kbytes 頁數(shù)：16 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體