RF Power LDMOS Transistor N?Channel Enhancement?Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features ? Advanced high performance in?package Doherty ? Greater negative gate?source voltage range for improved Class C operation

文件：385.37 Kbytes 頁數(shù)：17 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

Features ? Advanced high performance in--package Doherty ? Greater negative gate--source voltage range for improved Class C operation ? Designed for digital predistortion error correction systems

文件：254.82 Kbytes 頁數(shù)：8 Pages

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RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：1.19064 Mbytes 頁數(shù)：19 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. ? Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 50 Watts Avg., Input Sign

文件：461.16 Kbytes 頁數(shù)：13 Pages

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RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. Features ? Designed for Wide Instantaneous Bandwidt

文件：468.68 Kbytes 頁數(shù)：15 Pages

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RF Power LDMOS Transistor

N?Channel Enhancement?Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features ? Greater negative gate?source voltage range for improved Class C operation ? On?chip matching (50 ohm in

文件：362.83 Kbytes 頁數(shù)：20 Pages

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RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. ? Typical Single--Ca

文件：1.01021 Mbytes 頁數(shù)：18 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFETs

Features ? Greater Negative Gate--Source Voltage Range for Improved Class C Operation ? Designed for Digital Predistortion Error Correction Systems ? Optimized for Doherty Applications ? In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

文件：557.94 Kbytes 頁數(shù)：16 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

Features ? Advanced high performance in--package Doherty ? Greater negative gate--source voltage range for improved Class C operation ? Designed for digital predistortion error correction systems

文件：254.82 Kbytes 頁數(shù)：8 Pages

恩XP

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：1.19064 Mbytes 頁數(shù)：19 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體