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首頁(yè) >AS4C4M4>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
AS4C4M4F0	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F0-50	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F0-50JC	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F0-50JI	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F0-50TC	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F0-50TI	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F0-60	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F0-60JC	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F0-60JI	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC
AS4C4M4F0-60TC	文件：274.56 Kbytes Page：18 Pages	5V 4M?4 CMOS DRAM (Fast Page mode) Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely 文件：274.56 Kbytes 頁(yè)數(shù)：18 Pages	ALSC	ALSC

技術(shù)參數(shù)

功能描述：
16384Kbits 4M x 4 Replacement with DSCC 5962-n/a

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	AS4C4M4E1-60JC		24+	SOJ	37		詢價(jià)
深圳市豪邁興電子有限公司	AS4C4M4E1-60J	ALLIANCE	24+	SOJ	5650	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	AS4C4M4F1-60JC	ALIANCE	22+	原廠原封	8200	原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!	詢價(jià)
深圳市佳鑫美電子科技有限公司	AS4C4M4E1Q-60JC	ALLIANCE	25+	SOJ	2987	只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電!	詢價(jià)
深圳市振宏微科技有限公司	AS4C4M4F1Q-60JC	AllianceMemory	23+	NA	396	專做原裝正品,假一罰百!	詢價(jià)
深圳市華斯頓科技有限公司	AS4C4M4F1-60JC	ALLIANCE	25+23+	SOJ	38996	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
深圳市昊創(chuàng)電子有限公司	AS4C4M4F1-60JC	ALLIANCE	1824+	SOJ-26	3100	原裝現(xiàn)貨專業(yè)代理,可以代拷程序	詢價(jià)
上海市鑫鴻達(dá)電子	AS4C4M4F-60JC	AllianceMemoryInc	2022+		160	全新原裝貨期兩周	詢價(jià)
瀚佳科技(深圳)有限公司	AS4C4M4E1-60J	ALLIANCE	24+	SOJ	65200	一級(jí)代理/放心采購(gòu)	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	AS4C4M4E1-60JC	ALLIANCE	23+	SOJ-28	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)

更多AS4C4M4供應(yīng)商更新時(shí)間2026-1-21 16:30:00

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