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          首頁(yè) >AS4C4M4>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          AS4C4M4

          4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

          GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other feature

          文件:2.65183 Mbytes 頁(yè)數(shù):19 Pages

          AUSTIN

          AS4C4M4

          4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

          Austin Semiconductor

          AS4C4M4DG-6/IT

          4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

          GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other feature

          文件:2.65183 Mbytes 頁(yè)數(shù):19 Pages

          AUSTIN

          AS4C4M4DG-6/XT

          4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

          GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other feature

          文件:2.65183 Mbytes 頁(yè)數(shù):19 Pages

          AUSTIN

          AS4C4M4DG-6SLASHIT

          4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

          GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other fe

          文件:2.65183 Mbytes 頁(yè)數(shù):19 Pages

          AUSTIN

          AS4C4M4DG-6SLASHXT

          4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

          GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other fe

          文件:2.65183 Mbytes 頁(yè)數(shù):19 Pages

          AUSTIN

          AS4C4M4DG-7/IT

          4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

          GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other feature

          文件:2.65183 Mbytes 頁(yè)數(shù):19 Pages

          AUSTIN

          AS4C4M4DG-7/XT

          4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

          GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other feature

          文件:2.65183 Mbytes 頁(yè)數(shù):19 Pages

          AUSTIN

          AS4C4M4DG-7SLASHIT

          4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

          GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other fe

          文件:2.65183 Mbytes 頁(yè)數(shù):19 Pages

          AUSTIN

          AS4C4M4DG-7SLASHXT

          4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

          GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other fe

          文件:2.65183 Mbytes 頁(yè)數(shù):19 Pages

          AUSTIN

          技術(shù)參數(shù)

          • 功能描述:

            16384Kbits 4M x 4 Replacement with DSCC 5962-n/a

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          24+
          SOJ
          37
          詢價(jià)
          ALLIANCE
          24+
          SOJ
          5650
          公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
          詢價(jià)
          ALIANCE
          22+
          原廠原封
          8200
          原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!
          詢價(jià)
          ALLIANCE
          25+
          SOJ
          2987
          只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電!
          詢價(jià)
          AllianceMemory
          23+
          NA
          396
          專做原裝正品,假一罰百!
          詢價(jià)
          ALLIANCE
          25+23+
          SOJ
          38996
          絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價(jià)
          ALLIANCE
          1824+
          SOJ-26
          3100
          原裝現(xiàn)貨專業(yè)代理,可以代拷程序
          詢價(jià)
          AllianceMemoryInc
          2022+
          160
          全新原裝 貨期兩周
          詢價(jià)
          ALLIANCE
          24+
          SOJ
          65200
          一級(jí)代理/放心采購(gòu)
          詢價(jià)
          ALLIANCE
          23+
          SOJ-28
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          更多AS4C4M4供應(yīng)商 更新時(shí)間2026-1-21 16:30:00
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