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          首頁 >APT8075>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          APT8075

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast

          文件:62.06 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT8075

          N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          文件:49.96 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT8075

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          APT

          晶科電子

          APT8075AN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

          文件:310.04 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT8075BN

          N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

          文件:49.96 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT8075BN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

          文件:360.81 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT8075BVFR

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.

          文件:72.83 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT8075BVR

          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

          POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast

          文件:62.06 Kbytes 頁數(shù):4 Pages

          ADPOW

          APT8075DN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:371.9 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT8075HN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

          文件:298.07 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術(shù)參數(shù)

          • package_carrier:

            Tube

          • package_name:

            TO-247 (B) 3-lead

          • Breakdown Voltage (min):

            0

          • Breakdown Voltage (typ):

            0

          • Breakdown Voltage (max):

            800

          • Drain-Source (Gate Short- (min):

            0

          • Drain-Source (Gate Short- (typ):

            0

          • Drain-Source (Gate Short- (max):

            1

          • On-State Resistance (min):

            0

          • On-State Resistance (typ):

            0

          • On-State Resistance (max):

            12

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          ATP
          06+
          TO-247
          1200
          原裝
          詢價(jià)
          25+
          6500
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價(jià)
          APT
          24+/25+
          39
          原裝正品現(xiàn)貨庫存價(jià)優(yōu)
          詢價(jià)
          24+
          1100
          詢價(jià)
          APT
          23+
          TO-247
          3200
          絕對(duì)全新原裝!優(yōu)勢供貨渠道!特價(jià)!請(qǐng)放心訂購!
          詢價(jià)
          APT
          24+
          TO247
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢價(jià)
          APT
          22+
          TO-3P
          8200
          原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢!!
          詢價(jià)
          APT
          23+
          TO-247
          8650
          受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
          詢價(jià)
          APT
          23+
          TO-3P
          3000
          專做原裝正品,假一罰百!
          詢價(jià)
          Microch
          20+
          NA
          33560
          原裝優(yōu)勢主營型號(hào)-可開原型號(hào)增稅票
          詢價(jià)
          更多APT8075供應(yīng)商 更新時(shí)間2026-1-18 9:16:00
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