isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.

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